Akademik Veri Yönetim Sistemi
Conference on Solid State Crystals in Optoelectronics and Semiconductor Technology, ZAKOPANE, Polonya, 7 - 11 Ekim 1996, cilt.3179, ss.33-40, (Tam Metin Bildiri)
Photovoltaic effects from porous silicon (PS) based devices fabricated with electro-chemical etching processes have been investigated. Contact to the PS were made by bonding a small region of Al on a semi-transparent Au film. The structure of the uncoated porous layers were studied by SEM. Two levels of porosity were observed in n-type UV- and VIS-PS, surface etched features a few nanometres in diameter and macropores running deep in the bulk Si. Only nanopores were seen in p-type PS.