Photovoltaic effects from nano- and microstructured Si

Unal B., BAYLISS S., HARRIS P.

Conference on Solid State Crystals in Optoelectronics and Semiconductor Technology, ZAKOPANE, Poland, 7 - 11 October 1996, vol.3179, pp.33-40, (Full Text) identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 3179
  • Doi Number: 10.1117/12.276239
  • City: ZAKOPANE
  • Country: Poland
  • Page Numbers: pp.33-40
  • Istanbul University-Cerrahpasa Affiliated: No

Abstract

Photovoltaic effects from porous silicon (PS) based devices fabricated with electro-chemical etching processes have been investigated. Contact to the PS were made by bonding a small region of Al on a semi-transparent Au film. The structure of the uncoated porous layers were studied by SEM. Two levels of porosity were observed in n-type UV- and VIS-PS, surface etched features a few nanometres in diameter and macropores running deep in the bulk Si. Only nanopores were seen in p-type PS.