Determination of Power MOSFET's Gate Oxide Degradation Under Different Electrical Stress Levels Based on Stress-Induced Oxide Capacitance Changes

Sezgin-Ugranlı H. G., Özçelep Y.

IEEE Transactions On Electron Devices, vol.68, no.2, pp.688-696, 2021 (SCI-Expanded, Scopus)

• Publication Type: Article / Article
• Volume: 68 Issue: 2
• Publication Date: 2021
• Journal Name: IEEE Transactions On Electron Devices
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
• Page Numbers: pp.688-696
• Istanbul University-Cerrahpasa Affiliated: Yes