Determination of Power MOSFET's Gate Oxide Degradation Under Different Electrical Stress Levels Based on Stress-Induced Oxide Capacitance Changes

Sezgin-Ugranlı H. G., Özçelep Y.

IEEE Transactions On Electron Devices, cilt.68, sa.2, ss.688-696, 2021 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 68 Sayı: 2
  • Basım Tarihi: 2021
  • Dergi Adı: IEEE Transactions On Electron Devices
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.688-696
  • İstanbul Üniversitesi-Cerrahpaşa Adresli: Evet