A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

KUNTMAN A., ARDALI A., KUNTMAN H., Kacar F.

SOLID-STATE ELECTRONICS, cilt.48, sa.2, ss.217-223, 2004 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 48 Sayı: 2
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1016/j.sse.2003.07.001
  • Dergi Adı: SOLID-STATE ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.217-223
  • Anahtar Kelimeler: MOS transistors, hot carriers, Weibull distribution, measurement and evaluation, modeling and simulation of solid-state devices and processes, ACCELERATED LIFE-TEST, P-MOSFETS, MODEL
  • İstanbul Üniversitesi-Cerrahpaşa Adresli: Evet

Özet

The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.