Akademik Veri Yönetim Sistemi
International Journal of Electronics, 2026 (SCI-Expanded, Scopus)
This paper presents a low-voltage, low-power current-mode full-wave rectifier designed entirely with Fin Field Effect Transistors (FinFETs), without the use of resistors, diodes, or additional active elements. This makes the design highly suitable for integration in modern integrated circuits. FinFET technology, with its structural similarity to MOSFETs, offers several advantages over traditional CMOS, including scalability to nanometre dimensions, reduced short-channel effects, lower leakage currents, and improved energy efficiency due to lower supply voltages. These characteristics enable higher operating frequencies, faster switching, and greater precision–making FinFETs ideal for advanced analog circuit applications. Full-wave rectifiers, particularly those with reduced size and power consumption that operate at high frequencies, are critical components in analog signal processing and continue to be an area of active research. The proposed FinFET-based rectifier operates at a supply voltage of ±0.3 V, consumes only 72.786 nW, and supports an operating frequency of 1 GHz. Simulation results based on BSIM-CMG FinFET technology parameters, including DC and transient analyses, demonstrate the effectiveness and performance of the circuit. The results indicate that the design successfully leverages FinFET technology for efficient and compact analog rectifier implementations.