Akademik Veri Yönetim Sistemi
Materials Today Energy, cilt.49, 2025 (SCI-Expanded, Scopus)
p-Type Bi0.5Sb1.5Te3 thermoelectric thin films hold significant promise for thermal management applications in microscale and wearable electronic devices. However, their inferior thermoelectric performances mainly caused by the relatively low carrier mobility hinder the broad applications. In this study, high-quality Mnx(Bi0.25Sb0.75)2-xTe3 (00l) films are fabricated using molecular beam epitaxy at low substrate temperatures. The high crystalline quality, strong (00l) texture, and low lattice defects ensure the high carrier mobility and meanwhile Mn doping optimize carrier concentration, which lead to high thermoelectric power factor. The low substrate temperature suppresses the formation of intrinsic point defects and leads to a high carrier mobility. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy confirm that dilute Mn incorporation generate MnSb substitutional defects, which served as effective acceptor defects and significantly modulated the Fermi level and hole density. Finally, the Mn0.0025(Bi0.25Sb0.75)1.9975Te3 film yields optimized hole density and carrier mobility of 7.59 × 1019 cm−3 and 147.13 cm2V−1s−1, respectively, at room temperature, which results in prominent power factor of 6.20 mWm−1K−2, representing one of the highest values among recent reports. The superior power factor obtained in dilute Mn incorporated Mnx(Bi0.25Sb0.75)2-xTe3 films offers valuable insights for further optimizing thermoelectric performances and device applications of p-type Bi0.5Sb1.5Te3-based films.